スクリーンショット 2016-02-10 19.06.10

PH808DBR Mercury Series

Technology

  • DBR Single-Frequency Laser Chip
  • AlGaAs QW Active Layer

Features

  • Robust, monolithic die design
  • Pulsed operation for spectral stability at short pulse lengths
  • Package contains TEC cooling with precise thermistor control
  • High Slope Efficiency
  • Hermetic package for high reliability
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Absolute Maximum Rating

Parameter Symbol Unit Min Max
Storage Temperature TSTG °C 0 80
Operating Temperature TOP °C 5.0 70
CW Laser Forward Current, T=25°C IF mA **
Laser Reverse Voltage VR V 0.0
TEC Current ITEC A -1.1 1.1
TEC Voltage VTEC V -3.0 3.0
Thermistor Current ITHRM mA 1.0
Thermistor Voltage VTHRM V 10
**Do not exceed drive current or operating power of supplied LIV
CW Characteristics at TC = 25°C unless otherwise specified

Parameter Symbol Unit Min Typ Max
Center Wavelength @ 150mA λc nm 805 807 809
Optical Output Power Po mW See Power Options Call-out
Slope Efficiency ηd W/A 0.6 0.75
Threshold Current Ith mA 50 80
Laser Series Resistance RS Ω 2.0 2.5
Laser Forward Voltage @ 150mA VF V 2.0 2.5
Thermistor Resistance @ 25°C RT 10
Laser Line Width ∆v MHz 1 10
Beam Divergence @ FWHM θװ X θ º 6 X 28 8 X 32
Side Mode Suppression Ratio
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