スクリーンショット 2016-02-10 19.06.10

PH795DBR Mercury Series

Technology

  • DBR Single-Frequency Laser Chip
  • AlGaAs QW Active Layer

Features

  • Robust, monolithic die design
  • Pulsed operation for spectral stability at short pulse lengths
  • Package contains TEC cooling with precise thermistor control
  • High Slope Efficiency
  • Hermetic package for high reliability
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Absolute Maximum Rating

Parameter Symbol Unit Min Max
Storage Temperature TSTG °C 0 80
Operating Temperature TOP °C 5.0 70
CW Laser Forward Current, T=25°C IF mA **
Laser Reverse Voltage VR V 0.0
TEC Current ITEC A -1.1 1.1
TEC Voltage VTEC V -3.0 3.0
Thermistor Current ITHRM mA 1.0
Thermistor Voltage VTHRM V 10
**Do not exceed drive current or operating power of supplied LIV
CW Characteristics at TC = 25°C unless otherwise specified

Parameter Symbol Unit Min Typ Max
Center Wavelength @ 150mA λc nm 793 795 797
Optical Output Power Po mW See Power Options Call-out
Slope Efficiency ηd W/A 0.75 0.85
Threshold Current Ith mA 50 80
Laser Series Resistance RS Ω 2.0 2.5
Laser Forward Voltage @ 150mA VF V 2.0 2.5
Thermistor Resistance @ 25°C RT 10
Laser Line Width ∆v MHz 1 10
Beam Divergence @ FWHM θװ X θ º 6 X 28 8 X 32
Side Mode Suppression Ratio SMSR dB -30
Laser Polarization TE
Mode Structure Fundamental Mode
Handling Precautions

These devices are sensitive to ESD. When handling the module, grounded work area and wrist strap must be used. Always store in an antistatic container with all leads shorted together.

Minimum Power (mW)

40 / 80 / 120 / 180

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