広帯域バンドパスフィルター (Broad Bandpass Filter)

General Specifications
Diameter: 25.4 mm +0/-0.2 mm.
Thickness: Specified in the filter list below (mm), tol ±0.1 mm

Blocking: Avg < 0.1 % UV to block high
Slope: < 5 % defined as:

%Slope = λ(80% of Tpeak) – λc

λc

 x 100
広帯域バンドパスフィルター

Spectral measurements
When available, spectral curve at room temperature and normal incidence angle can be seen by clicking on the Description.
Description: BBP-HP1-HP2 in nanometers (HP 50 % of Tpeak), “c” indicates that the filter is classified after Cuton and Cutoff 5 %, instead of HP1 and HP2 50 % as normal.

Description Substrate Thk (mm) HP1 50 %
+/- tol		 HP2 50 %
+/- tol		 Transm
> %		 Block high (nm)
BBP-1190-1590c nm Glass 0.5 30 30 75 3500
BBP-1260-1500 nm Glass 0.55 50 50 70 3500
BBP-1615-2280 nm Silicon 0.5 50 50 70 3500
BBP-1800-2200 nm Glass 0.5 50 50 65 3500
BBP-2050-2600 nm Glass 0.55 150 150 80 3500
BBP-2150-3100c nm Silicon 0.5 85 85 70 7500
BBP-2960-3260 nm Quartz 1 75 75 70 5500
BBP-3000-5000 nm Sapphire 1 100 100 70 30000
BBP-3190-3840c nm Quartz 1 75 75 70 30000
BBP-3440-4075 nm Sapphire 1 50 50 70 30000
BBP-3950-6250 nm Silicon 0.5 100 120 70 10000
BBP-4150-4620 nm Sapphire 0.5 100 100 70 30000
BBP-4300-4600 nm Silicon 1 100 100 70 6000
BBP-4700-5300 nm Sapphire 0.5 100 100 70 22000
BBP-5030-5730c nm Sapphire 0.5 75 75 70 30000
BBP-5040-5715c nm Sapphire 0.5 75 75 70 30000
BBP-5500-6000 nm Silicon 1 100 100 70 14000
BBP-7000-8750c nm Ge 1 100 200 80 12000
BBP-8050-12700 nm Ge 1 200 250 75 18000
BBP-8075-9400 nm Ge 1 150 150 70 20000
BBP-8150-11000 nm Zns 1.4 200 200 70 20000
BBP-8250-8780 nm Ge 1 50 50 70 12000
BBP-8500-15800 nm Ge 0.5 350 350 70 23000
BBP-9040-9360 nm Ge 1 100 100 70 12000
BBP-9050-9450 nm Ge 1 150 150 70 12000
BBP-9100-9455 nm Ge 1 100 100 70 12000
BBP-9350-10075 nm Silicon 0.5 150 150 17000
BBP-10000-11230 nm Silicon 0.5 250 250 70 20000
BBP-10100-11500 nm Ge 0.5 300 300 80 15000

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