808 nm laser diode
Technology
- DBR Single-Frequency Laser Chip
- InGaAs QW Active Layer
- Epi designed for high reliability
Features
- Available in several package styles
- Pulsed operation for spectral stability at short pulse lengths
- High power for CW applications
- High Slope Efficiency
Absolute Maximum Rating
| Parameter | Symbol | Unit | Min | Max |
|---|---|---|---|---|
| Storage Temperature | TSTG | °C | 0 | 80 |
| Operating Temperature | TOP | °C | 5.0 | 70 |
| CW Laser Forward Current, T=Top | IF | mA | – | ** |
| Pulsed Laser Forward Current, T=25°C, | IF | A | – | 0.5 |
| PW=300 ns, DC=10% | ||||
| Laser Reverse Voltage | VR | V | – | 0.0 |
| Photodiode Forward Current 1/ 2/ | IP | mA | – | 5.0 |
| Photodiode Reverse Voltage 1/ 2/ | VR | V | – | 20.0 |
| Photodiode Dark Current, VR=10V, LD IF=0, 1/ 2/ | ID | nA | – | 50 |
| TEC Current 1/ 2/ | ITEC | A | -2.5 | 2.5 |
| TEC Voltage 1/ 2/ | VTEC | V | -6.0 | 6.0 |
| Thermistor Current 1/ 2/ | ITHRM | mA | – | 1.0 |
| Thermistor Voltage 1/ 2/ | VTHRM | V | – | 10 |
| ESD (HBM) | – | V | – | 500 |
| External Back Reflection | – | dB | – | -14 |
| Lead SolderingTemperature, 10 sec. Max., 1/ 2/ | – | °C | – | 260 |
| Fiber Pull Force 1/ | – | N | – | 5.0 |
| Fiber Bend Radius 1/ | – | mm | – | 35 |
1/ Butterfly package , 2/ TO-8 package **Do not exceed drive current or operating power of supplied LIV